Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
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概要
- 論文の詳細を見る
The oxidation-induced Ge condensation of SiGe/Si-on-insulator structures was investigated. The relaxation rate of SiGe on insulator (SGOI) abruptly decreased with SiGe thickness below 50 nm. To enhance the relaxation rate in ultra thin SGOI, a new technique combined with intermediate-dose H+ implantation ($5\times 10^{15}$ cm-2) and post annealing (1200 °C) was developed. It was demonstrated that highly relaxed (70%) ultra thin SGOI with a low defect density (${<}10^{6}$ cm-2) is realized by this technique.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Tsunoda Isao
Department Of Electronics Kyushu University
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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NINOMIYA Masaharu
SUMCO
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NAKAMAE Masahiko
SUMCO
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Miyao Masanobu
Department Of Electronics Kyushu University
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Enokida Toyotsugu
Analyses Of Evaluation Center Fukuryo Semicon Engineering Corporation
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Tanaka Masanori
Department Of Aeronautics And Astronautics
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Enokida Toyotsugu
Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192, Japan
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Ninomiya Masaharu
SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015, Japan
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