Role of Vacancy Annihilation in Electrical Activation of P Implanted in Ge
スポンサーリンク
概要
- 論文の詳細を見る
Due to the scaling limit faced by Si CMOS technology, much interest is being given on Ge. However, development of the Ge device technology requires more research into the fabrication processes. In this study, we have investigated the doping characteristics of P in Ge as a function of the dopant dose and substrate orientation. It is found that recovery characteristics of damaged layers depends on crystal orientation of the Ge substrates for samples having completely amorphized surface-layers produced by high-dose (1x10^<15> cm^<-2>) implantation. This is due to orientation-dependent regrowth velocity of Ge. On the other hand, no orientation dependence is observed for samples implanted with low dose (5x10^<13>-1x10^<14> cm^<-2>), whose surface layers are partially amorphized. For high-dose samples, the complete carrier-activation coincides with the damage-recovery at 350-400℃. However, higher temperature annealing (500-550℃) is necessary for carrier activation in low-dose samples, though crystallinity recovers at 250-300℃. The temperature-dependence of the carrier-activation ratio suggests that carrier-activation in low-dose samples is mediated by vacancy-migration.
- 2011-04-08
著者
-
Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
-
Anisuzzaman Mohammad
Department Of Electronics Kyushu University
関連論文
- (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique
- Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
- Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
- Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
- Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film
- Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
- Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
- Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
- Behavior of Defects Induced by Low-Energy Ions in Silicon Films
- Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
- High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode
- High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth
- Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
- A17 SYNTHESIS OF NANO COMPOSIT ZEOLITE WITH SESQUIOXIDE IN RELATION TO ENVIRONMENTAL POLLUTION REMEDIATION
- Role of Vacancy Annihilation in Electrical Activation of P Implanted in Ge
- Role of vacancy annihilation in electrical activation of P implanted in Ge (有機エレクトロニクス)
- Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex ($x$: 0–1) on Insulating Substrate
- High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth
- Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform
- Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
- Formation of $\beta$-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
- Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization
- Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator
- Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
- Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
- Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
- Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization
- Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
- Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures