Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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SADOH Taizoh
Department of Electronics, Kyushu University
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Sadoh Taizoh
Department Of Electronics Kyushu University
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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MATSUURA Ryo
Department of Electronics, Kyushu University
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NINOMIYA M.
SUMCO
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NAKAMAE M.
SUMCO
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ENOKIDA T.
Fukuryo Semicon Engineering
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HAGINO H.
Fukuryo Semicon Engineering
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MIYAO M.
Department of Electronics, Kyushu University
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Matsuura Ryo
Department Of Electronics Kyushu University
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Miyao M.
Department Of Electronics Kyushu University
関連論文
- (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique
- Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
- Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
- Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
- Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film
- Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
- Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
- Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
- Behavior of Defects Induced by Low-Energy Ions in Silicon Films
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion
- Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
- Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films Insulator
- Dose-Dependent Etching Selectivity in SiO_2 by Focused Ion Beam
- Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
- Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
- Formation of β-FeSi_Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure
- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO_2 Layered Structure
- High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode
- High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth
- Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
- A17 SYNTHESIS OF NANO COMPOSIT ZEOLITE WITH SESQUIOXIDE IN RELATION TO ENVIRONMENTAL POLLUTION REMEDIATION
- Role of Vacancy Annihilation in Electrical Activation of P Implanted in Ge
- Role of vacancy annihilation in electrical activation of P implanted in Ge (有機エレクトロニクス)
- Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex ($x$: 0–1) on Insulating Substrate
- High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth
- Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
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- Epitaxial Growth of Ferromagnetic Silicide Fe_3Si on Si (111) Substrate
- High Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode
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- Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform
- Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
- Formation of $\beta$-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
- Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization
- Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator
- Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
- Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
- Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
- Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization
- Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
- Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures