Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• SADOH Taizoh

  Department of Electronics, Kyushu University

• MIYAO Masanobu

  Department of Electronics, Kyushu University

• Sadoh Taizoh

  Department Of Electronics Kyushu University

• MATSUURA Ryo

  Department of Electronics, Kyushu University

• ENOKIDA Toyotsugu

  Analyses of Evaluation Center, Fukuryo Semicon Engineering Corporation

• NINOMIYA Masaharu

  SUMCO

• NAKAMAE Masahiko

  SUMCO

• HAGINO Hiroyasu

  Analysis & Evaluation Center, Fukuryo Semicon Engineering Corporation

• Miyao M

  Department Of Electronics Kyushu University

関連論文

• (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique
• Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
• Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
• Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
• Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film
• Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
• Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
• Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
• Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
• Behavior of Defects Induced by Low-Energy Ions in Silicon Films
• Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
• Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion
• Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
• Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
• Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
• Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
• Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films Insulator
• Dose-Dependent Etching Selectivity in SiO_2 by Focused Ion Beam
• Association between Bite Force and TMD Symptoms in Young Adults
• Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
• Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
• Formation of β-FeSi_Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure
• Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO_2 Layered Structure
• High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode
• High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth
• Giant Ge-on-Insulator Formation by Si--Ge Mixing-Triggered Liquid-Phase Epitaxy
• Photoluminescence characterization of strained Si-SiGe-on-insulator wafers
• Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
• Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers
• Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator

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