Photoluminescence characterization of strained Si-SiGe-on-insulator wafers

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• WANG Dong

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• NAKASHIMA Hiroshi

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• MATSUMOTO Koji

  SUMCO

• NAKAMAE Masahiko

  SUMCO

• Wang Dong

  Art Science And Technology Center For Cooperative Research Kyushu University

• Nakashima Hiroshi

  Art Science And Technology Center For Cooperative Research Kyushu University

• Nakamae Masahiko

  Sumco Corporation

• Matsumoto Koji

  Sumco Corporation

関連論文

• Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al_2O_3 Deposition and Subsequent Post-Deposition Annealing
• Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH_4OH/H_2O_2 Solution and Hf Metal Hard Mask
• Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
• Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
• Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
• Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
• Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
• Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
• Fabrication of Ge Metal--Oxide--Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al
• Photoluminescence characterization of strained Si-SiGe-on-insulator wafers
• Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements
• Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method
• High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation
• Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
• Fe Gettering for High-Efficiency Solar Cell Fabrication
• Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
• Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
• Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
• Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
• Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
• Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
• Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
• Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers
• Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator

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