Fe Gettering for High-Efficiency Solar Cell Fabrication
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概要
- 論文の詳細を見る
The gettering behavior of Fe into Si at 600°C for samples with and without a p+ layer was investigated by deep-level transient spectroscopy. These samples contaminated with Fe at 930°C for 4 h at a concentration of $4.6\times 10^{13}$ cm-3 were annealed at 600°C to induce gettering. The concentration of Fe atoms in the bulk Si markedly decreased with annealing time at 600°C. It was found that the gettering site of Fe is not the p+ layer but the very thin surface layer.
- 2005-06-15
著者
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WANG Dong
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Art, Science and Technology Center for Cooperative Research, Kyushu University
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Terakawa Takeshi
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1, Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
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Terakawa Takeshi
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
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