Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
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概要
- 論文の詳細を見る
Interface states density ($N_{\text{ss}}$) and minority carrier generation lifetime ($\tau_{\text{g}}$) were evaluated in detail for strained Si/SiGe wafers by deep-level transient spectroscopy and metal-oxide-semiconductor transient capacitance methods. $N_{\text{ss}}$ shows a nondependence on strained Si thickness ($d_{\text{Si}}$) within a critical thickness and a clear dependence on Ge fraction (Ge%). $\tau_{\text{g}}$ shows a strong dependence on both $d_{\text{Si}}$ and Ge%. The reasons for these dependences are discussed in detail.
- 2005-04-15
著者
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WANG Dong
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NINOMIYA Masaharu
Sumitomo Mitsubishi Silicon Corporation
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NAKAMAE Masahiko
Sumitomo Mitsubishi Silicon Corporation
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Ninomiya Masaharu
Sumitomo Mitsubishi Silicon Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0579, Japan
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