Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al_2O_3 Deposition and Subsequent Post-Deposition Annealing
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概要
- 論文の詳細を見る
- 2010-07-25
著者
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YANG Haigui
Art, Science and Technology Center for Cooperative Research, Kyushu University
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IYOTA Masatoshi
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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IKEURA Shogo
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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WANG Dong
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Art, Science and Technology Center for Cooperative Research, Kyushu University
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Yang Haigui
Art Science And Technology Center For Cooperative Research Kyushu University
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Ikeura Shogo
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Iyota Masatoshi
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Wang Dong
Art Science And Technology Center For Cooperative Research Kyushu University
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Ikeura Shogo
Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
関連論文
- Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al_2O_3 Deposition and Subsequent Post-Deposition Annealing
- Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH_4OH/H_2O_2 Solution and Hf Metal Hard Mask
- Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
- Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
- Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
- Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
- Fabrication of Ge Metal--Oxide--Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al
- Photoluminescence characterization of strained Si-SiGe-on-insulator wafers
- Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements
- Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method
- High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation
- Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
- Fe Gettering for High-Efficiency Solar Cell Fabrication
- Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
- Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
- Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
- Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
- Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
- Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
- Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers