Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation

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概要

• 論文の詳細を見る

• An amorphous silicon nitride thin film has been fabricated by electron cyclotron resonance plasma irradiation. The growth of the film is carried out by Ar/N2 mixed plasma irradiation at a low temperature of 400°C. It is found that nitrogen partial pressure decisively affects film quality. A SiN film having a structure nearest to stoichiometric construction is obtained by precisely controlling the N2 mixing ratio at 60%. This implies that the existence of Ar with a suitable partial pressure increases the nitrogen radical concentration in the Ar/N2 mixed plasma. Under optimum conditions, the as-grown SiN film shows a leakage current more than two orders of magnitude lower than that of thermally grown SiO2 having the same equivalent oxide thickness. A high-resolution transmission electron micrograph shows an atomically flat interface of the Si substrate and SiN film.

• Japan Society of Applied Physicsの論文
• 2004-01-15

著者

• WANG Dong

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• NAKASHIMA Hiroshi

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• Sugimoto Youhei

  Interdisciplinary Graduate School Of Engineering Sciences Kyushu University

• IKEDA Ken-ichi

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University

• ZHAO Liwei

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• Luu Nam

  Interdisciplinary Graduate School Of Engineering Sciences Kyushu University

• Zhao Liwei

  Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Ikeda Ken-ichi

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Luu Nam

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Nakashima Hideheru

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Wang Dong

  Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

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