Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
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概要
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We succeeded in improving a TiN/Ge contact by optimizing the TiN deposition. From contact resistance measurements of TiN/n+-Ge, the specific contact resistivity was determined to be 7.9\times 10^{-6} \Omega\cdotcm2 for a surface impurity concentration of 3.9\times 10^{19} cm-3, suggesting that an interlayer between TiN and Ge is conductive. It was also found that a peripheral surface-state current dominated the reverse leakage current of the contact. The leakage current was significantly decreased by the surface passivation using GeO2. The passivated TiN/p-Ge contact showed a high hole barrier height of 0.57 eV, implying an extremely low electron barrier height of 0.09 eV.
- 2012-07-25
著者
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YANG Haigui
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Art, Science and Technology Center for Cooperative Research, Kyushu University
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Yamamoto Keisuke
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Harada Kenji
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Harada Kenji
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Wang Dong
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Yang Haigui
Art, Science and Technology Center for Cooperative Research, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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