High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation
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概要
- 論文の詳細を見る
- 2011-05-25
著者
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YANG Haigui
Art, Science and Technology Center for Cooperative Research, Kyushu University
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WANG Dong
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Art, Science and Technology Center for Cooperative Research, Kyushu University
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Yang Haigui
Art Science And Technology Center For Cooperative Research Kyushu University
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YAMAMOTO Keisuke
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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Wang Dong
Art Science And Technology Center For Cooperative Research Kyushu University
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Yamanaka Takeshi
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Nakashima Hiroshi
Art Science And Technology Center For Cooperative Research Kyushu University
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Ueno Ryuji
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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HIRAYAMA Kana
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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Hirayama Kana
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Yamamoto Keisuke
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
関連論文
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- Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
- Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
- Fabrication of Ge Metal--Oxide--Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al
- Photoluminescence characterization of strained Si-SiGe-on-insulator wafers
- Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements
- Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method
- High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation
- Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
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- Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
- Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
- Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
- Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
- Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
- Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
- Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers