Yamanaka Takeshi | Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
スポンサーリンク
概要
関連著者
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YANG Haigui
Art, Science and Technology Center for Cooperative Research, Kyushu University
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WANG Dong
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Art, Science and Technology Center for Cooperative Research, Kyushu University
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Yamanaka Takeshi
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Yamamoto Keisuke
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Yang Haigui
Art Science And Technology Center For Cooperative Research Kyushu University
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YAMAMOTO Keisuke
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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Wang Dong
Art Science And Technology Center For Cooperative Research Kyushu University
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Nakashima Hiroshi
Art Science And Technology Center For Cooperative Research Kyushu University
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Ueno Ryuji
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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HIRAYAMA Kana
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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Hirayama Kana
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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HARADA Kenji
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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SADA Takahiro
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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SAKAMOTO Keita
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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KOJIMA Syuta
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University
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Kojima Syuta
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Sada Takahiro
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Sakamoto Keita
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
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Harada Kenji
Interdisciplinary Graduate School Of Engineering Sciences Kyushu University
著作論文
- High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation
- Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures