NAKASHIMA Hiroshi | Art, Science and Technology Center for Cooperative Research, Kyushu University

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概要

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著作論文

Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al_2O_3 Deposition and Subsequent Post-Deposition Annealing
Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH_4OH/H_2O_2 Solution and Hf Metal Hard Mask
Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
Fabrication of Ge Metal--Oxide--Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al
Photoluminescence characterization of strained Si-SiGe-on-insulator wafers
Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements
Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method
High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation
Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
Fe Gettering for High-Efficiency Solar Cell Fabrication
Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers

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