Fabrication of Ge Metal--Oxide--Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al

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概要

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• A novel method of electrical passivation of a Ge surface by an ultrathin SiO2/GeO2 bilayer is proposed as an effective method for fabricating metal--oxide--semiconductor (MOS) structures, which can be processed through the thermal etching of GeO2 by vacuum annealing and subsequent SiO2 deposition. We demonstrated the feasibility of this passivation technique by performing interface state density ($D_{\text{it}}$) measurements of MOS capacitors, which were fabricated using several surface preparations and subsequent gate insulating film deposition. A $D_{\text{it}}$ of $4\times 10^{11}$ cm-2 eV-1 was obtained at around midgap. We also investigated the effect of postmetallization annealing after Al deposition (Al-PMA). Al-PMA was found to be very effective for decreasing $D_{\text{it}}$, which was $9.4\times 10^{10}$ cm-2 eV-1 at around midgap for a capacitor with PMA at 400 °C. The role of Al as a defect terminator was discussed.

• 2011-04-25

著者

• YANG Haigui

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• WANG Dong

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• NAKASHIMA Hiroshi

  Art, Science and Technology Center for Cooperative Research, Kyushu University

• Ueno Ryuji

  Interdisciplinary Graduate School Of Engineering Sciences Kyushu University

• Hirayama Kana

  Interdisciplinary Graduate School Of Engineering Sciences Kyushu University

• Hirayama Kana

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Iwamura Yoshiaki

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

• Yoshino Keisuke

  Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

関連論文

• Passivation of Electrically Active Defects in Ge-Rich SiGe-on-Insulator by Al_2O_3 Deposition and Subsequent Post-Deposition Annealing
• Electrical and Structural Properties of TaN Gate Electrodes Fabricated by Wet Etching Using NH_4OH/H_2O_2 Solution and Hf Metal Hard Mask
• Direct Evidence of Polycrystalline Silicon Thin Films Formation during Aluminum Induced Crystallization by In-Situ Heating TEM Observation
• Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
• Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
• Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
• Fabrication of Ge Metal--Oxide--Semiconductor Capacitors with High-Quality Interface by Ultrathin SiO2/GeO2 Bilayer Passivation and Postmetallization Annealing Effect of Al
• Photoluminescence characterization of strained Si-SiGe-on-insulator wafers
• Electrical Characterization of Strained Si/SiGe Wafers using Transient Capacitance Measurements
• Measurement of Strain in Freestanding Si/SixNy Membrane by Convergent Beam Electron Diffraction and Finite Element Method
• High-Performance Ge Metal-Oxide-Semiconductor Field-Effect Transistors with a Gate Stack Fabricated by Ultrathin SiO_2/GeO_2 Bilayer Passivation
• Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
• Fe Gettering for High-Efficiency Solar Cell Fabrication
• Low-Temperature Fabrication of Polycrystalline Si Thin Film Using Al-Induced Crystallization without Native Al Oxide at Amorphous Si/Al Interface
• Schottky Source/Drain Ge Metal-Oxide-Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures
• Fabrication of TiN/Ge Contact with Extremely Low Electron Barrier Height
• Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method
• Method for Detecting Defects in Silicon-On-Insulator Using Capacitance Transient Spectroscopy
• Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation
• Photoluminescence Characterization of Strained Si–SiGe-on-Insulator Wafers

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