Role of Heavily B-doped Layer on Low-Temperature Fe Gettering in Bifacial Si Solar Cell Fabrication
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概要
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The gettering behaviors of Fe into Si with and without a p+ layer are investigated by deep-level transient spectroscopy. The samples contaminated with Fe in a wide concentration range were annealed at 600 °C to induce gettering. The surface-layer gettering behaviors of Fe for the sample without the p+ layer strongly depend on the Fe contamination level, in which the surface-layer gettering is not effective for the sample with low-level contamination at a concentration of less than $1 \times 10^{13}$ cm-3 but effective for the sample with middle-level contamination at a concentration of $(1--5) \times 10^{13}$ cm-3. In contrast, the samples with the p+ layer show effective gettering for low- and middle-level contaminations. The gettering mechanisms of Fe in Si without and with the p+ layer are discussed in detail.
- 2006-04-15
著者
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WANG Dong
Art, Science and Technology Center for Cooperative Research, Kyushu University
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NAKASHIMA Hiroshi
Art, Science and Technology Center for Cooperative Research, Kyushu University
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Terakawa Takeshi
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
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Wang Dong
Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan
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