High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-01

著者

• SADOH Taizoh

  Department of Electronics, Kyushu University

• MIYAO Masanobu

  Department of Electronics, Kyushu University

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• TSURUSHIMA Toshio

  Department of Electronic Device Engineering, Kyushu University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• Zhang Yi-qun

  Department Of Electronics Kyushu University

• Kenjo Atsushi

  Department Of Electronics Kyushu University

• Miyao Masanobu

  Department Of Electronics Kyushu University

• YASUNAGA Hiroki

  Department of Electronics, Kyushu University

• Tsurushima Toshio

  Department Of Electronics Kyushu University

• Yasunaga Hiroki

  Department Of Electronics Kyushu University

• TSURUSHIMA Toshio

  Department of Electrical Engineering, Kyushu University

関連論文

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• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
• Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
• Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
• Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film
• Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
• Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
• Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
• Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
• Behavior of Defects Induced by Low-Energy Ions in Silicon Films
• Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
• Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion
• Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
• Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
• Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
• Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
• Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films Insulator
• Dose-Dependent Etching Selectivity in SiO_2 by Focused Ion Beam
• Far-Infrared Photoconductivity in Gallium Arsenide
• Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
• Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
• Formation of β-FeSi_Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure
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• Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex ($x$: 0–1) on Insulating Substrate
• High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth
• Formation of Tensilely Strained Germanium-on-Insulator
• Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform
• Effect of Addition of Al to Single-Crystalline CoFe Electrodes on Nonlocal Spin Signals in Lateral Spin-Valve Devices
• Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
• Formation of $\beta$-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
• New Magnetic Flash Memory with FePt Magnetic Floating Gate
• Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization
• Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator
• Room-Temperature Tunneling Magnetoresistance in Magnetic Tunnel Junctions with a D0_{3}-Fe
• Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
• Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
• Molecular Beam Epitaxy of Co
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• Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
• Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
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• Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
• Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures

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