Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization
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概要
- 論文の詳細を見る
The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1-xGex ($x$: 0–1) on SiO2 has been investigated. A growth velocity exceeding 20 μm/h was obtained for samples in the entire range of Ge fractions ($x$: 0–1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-Si1-xGex ($x$: 0–1) with large areas (${>}20$ μm) were obtained at a low temperature (400°C). This newly developed method has a high potential for fabricating poly-Si1-xGex ($x$: 0–1) on a glass substrate.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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KENJO Atsushi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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AOKI Tomohisa
Department of Electronics, Kyushu University
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Kanno Hiroshi
Department Of Electronics Kyushu University
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Aoki Tomohisa
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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Kanno Hiroshi
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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Miyao Masanobu
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
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