Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• SADOH Taizoh

  Department of Electronics, Kyushu University

• MIYAO Masanobu

  Department of Electronics, Kyushu University

• Inoue H

  Optical Device Department Device Development Data Storage Technology Center Tdk Corporation

• Inoue H

  Tdk Corp. Nagano Jpn

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• INOUE Hirotoshi

  Department of Electrical and Computer Engineering, Kumamoto University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• Inoue Hironori

  Hitachi Research Laboratory Hitachi Ltd.

• Inoue H

  Faculty Of Technology Tokyo Universily Of Agriculture And Technology:(present Address) Nippon Denso

• MIYAUCHI Akihiro

  Hitachi Research Laboratory, Hitachi Ltd.

• Kenjo A

  Kyushu Univ.

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Miyao M

  Department Of Electronics Kyushu University

• KENJO Atsushi

  Kyushu University, Department of Electronics

• Miyauchi Akihiro

  Hitachi Research Laboratory Hitachi Ltd.

• Kenjo A

  Kyushu University Department Of Electronics

• Inoue Hajime

  Institute Of Applied Physics And Tsukuba Advanced Research Alliance (tara) University Of Tsukuba

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