Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser

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概要

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• Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ${\sim}0.4$-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by $\phi$ scan, and $\omega$ scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• Funakubo Hiroshi

  Department Of Innovative And Engineered Materials

• Shimizu Yoshitada

  Kanagawa Industrial Technology Research Institute

• AKIYAMA Kensuke

  Kanagawa Industrial Technology Research Institute

• OHYA Seishiro

  Kanagawa Industrial Technology Research Institute

• ITO Takeshi

  Kanagawa Industrial Technology Research Institute

• YASAKA Shinji

  Kanagawa Industrial Technology Research Institute

• MITSUHASHI Masahiko

  Kanagawa Industrial Technology Research Institute

• Kaneko Satoru

  Kanagawa Industrial Technol. Center Kanagawa Jpn

• Okamoto Shoji

  Department Of Dermatology School Of Medicine Chiba University

• Watanabe Takayuki

  Department Of Biochemistry School Of Dentistry Hokkaido University

• Saito Keisuke

  PANalytical Japan, 1-7-3 Hamamatsucho, Minato-ku, Tokyo 105-0013, Japan

• Saito Keisuke

  PANalytical Application Laboratory, 7-3 Hamamatsucho 1-chome, Minato-ku, Tokyo 105-0013, Japan

• Watanabe Takayuki

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan

• Ohya Seishiro

  Kanagawa Industrial Technology Research Institute, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

• Akiyama Kensuke

  Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan

• Funakubo Hiroshi

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan

• Mitsuhashi Masahiko

  Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

• Mitsuhashi Masahiko

  Kanagawa Industrial Technology Research Institute, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

• Shimizu Yoshitada

  Kanagawa Industrial Technology Research Institute, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

• Funakubo Hiroshi

  Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Okamoto Shoji

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan

• ITO Takeshi

  Kanagawa Industrial Technology Center

• Ito Takeshi

  Kanagawa Industrial Technology Research Institute, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

• Yasaka Shinji

  Kanagawa Industrial Technology Research Institute, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

• Ohya Seishiro

  Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

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