Effects of A-Site Occupancy of Bismuth Ions on the Dielectric Tunable Properties of Pyrochlore Bismuth Zinc Niobate Films
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概要
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The A-site composition dependence of cubic pyrochlore Bi--Zn--Nb--O (BZN) thin films of dielectric tunable properties was investigated. (111)-textured BZN films with a wide range of Bi/Nb ratios (0.62--1.26) were fabricated by metal organic chemical vapor deposition. Raman spectral analysis revealed that by changing the Bi/Nb ratio in BZN films, the Bi concentration of the A-site mainly varied. Dielectric constant and dielectric tunability were found to increase with increasing Bi ion occupancy of the A site. These experimental findings suggest that the Bi occupancy of A site is an important factor for designing Bi based pyrochlore dielectric tunable materials.
- 2012-09-25
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Yamada Tomoaki
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Nakajima Mitsumasa
NTT Microsystem Integration Laboratory, Nippon Telegraph and Telephone, Atsugi, Kanagawa 243-0198, Japan
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Okaura Shingo
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yamada Tomoaki
Department of Materials, Physics and Energy Engineering, Nagoya University, Nagoya 464-8603, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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