Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering
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概要
- 論文の詳細を見る
Epitaxial Pt films with (111) and (100) orientations were grown on Y2O3-stabilized ZrO2 (YSZ)-covered (100)Si substrates by RF sputtering. (111)Pt films were epitaxially grown on (100)YSZ$\parallel$(100)Si substrates at 580 and 680°C, but competitive crystal orientations of (111) and (100) at 780°C. In contrast, a (100)-oriented epitaxial Pt film was grown at 550°C on a (100)YSZ$\parallel$(100)Si substrate with a (100)-oriented epitaxial (100)Ir buffer layer. This orientational control of epitaxial Pt films enables the epitaxial growth of perovskite layers with different orientations on thermally and chemically stable Pt bottom electrodes grown on (100)Si substrates.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Horita Susumu
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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AKIYAMA Kensuke
Kanagawa Industrial Technology Research Institute
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Okamoto Shoji
Department Of Dermatology School Of Medicine Chiba University
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Watanabe Takayuki
Department Of Biochemistry School Of Dentistry Hokkaido University
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Kaneko Satoru
Kanagawa Industrial Technology Research Institute, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Akiyama Kensuke
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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