Material Properties of Heteroepitaxial Ir and Pb(ZrxTi1-x)O3 Films on (100)(ZrO2)1-x(Y2O3)x/(100)Si Structure Prepared by Sputtering
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概要
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We investigated the crystalline quality and electrical properties of heteroepitaxial Ir and Pb(ZrxTi1-x)O3 films deposited by sputtering on an epitaxial (100)(ZrO2)1-x(Y2O3)x film/(100)Si substrate structure. The Ir(100) and Ir(111) orientations were enhanced and reduced, respectively, by decreasing the deposition rate. The φ scan pattern of X-ray diffraction showed that the (100) oriented film was the heteroepitaxial film on the epitaxial (100)YSZ film with a cube on cube relationship. On this epitaxial (100)Ir film, a heteroepitaxial (001)PZT film was obtained by reactive sputtering. The P–E hysteresis loop of the 200-nm-thick epitaxial PZT film showed a well-saturated square shape at the ac amplitude of 3 V, and the remanent polarization 2Pr and the coercive field 2Ec were 83 µC/cm2 and 131 kV/cm, respectively. The leakage current was about 1×10-7 A/cm2 at ±5 V.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-09-30
著者
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Horita Susumu
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Umemoto Shinya
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Horii Sadayoshi
School Of Material Science Japan Advanced Institute Of Science And Technology
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Horita Susumu
School of Materials Science, Japan Advanced Institute of Science and Technology, Hokuriku, Tatsunokuchi, Ishikawa 923-1292, Japan
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Horii Sadayoshi
School of Materials Science, Japan Advanced Institute of Science and Technology, Hokuriku, Tatsunokuchi, Ishikawa 923-1292, Japan
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