Low-Temperature Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and Ozone Gas

概要

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Using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure and above 200 °C, we deposited a Si oxide film. Fourier transformer infrared (FT-IR) spectra of the films were very similar to those of thermal SiO_2 films without peaks due to carbon for deposition temperatures T_s from 200 to 350 °C. Although a small peak due to the Si–OH bond appeared for T_s ≤300 °C, it was reduced with increasing T_s and almost disappeared around 350 °C. Secondary ion mass spectrometry measurements showed that the concentrations of metal and carbon impurities were at a negligible level for device performance even for T_s = 200 °C. The dielectric property of the film deposited at 350 °C was also shown to be comparable to the SiO_x film produced by a conventional low-temperature deposition method, although the estimated density of interface trap was in the order of 10^<11>/(cm^2·eV).
2009-03-25