Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer
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概要
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This article describes the fabrication process and capacitance–voltage ($C$–$V$) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. $C$–$V$ characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure, while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained almost unchanged after 4 h at $T=85$ °C. Also, another new memory structure comprising SiO2/Al2O3 and the Al-rich Al2O3 structure is proposed, which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Nakata Shunji
NTT Microsystem Integration Laboratories
-
Saito Kunio
Ntt Microsystem Integration Laboratories
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Shimada Masaru
Ntt Microsystem Integration Laboratories
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Nakata Shunji
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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