Reversible Resistive Switching in Bi4Ti3O12 Thin Films Deposited by Electron Cyclotron Resonance Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
We have newly found that reversible resistive switching occurs at room temperature in a Bi4Ti3O12 thin film deposited by electron cyclotron resonance sputtering. The resistive switching was observed in several stacked capacitor structures regardless of the combination of top and bottom electrodes, such as Au, Pt/Ti, and Ru, though the details of current–voltage characteristics were slightly different. The large magnitude of the resistance ratio in low-resistance and high-resistance states, reversible switching with voltage pulses, and long-term retention characteristics are described. Resistance in the low-resistance state hardly depended on neither the area of the electrode pad nor the thickness of bismuth titanate films. We speculate that reversible resistive switching is caused by the creation and annihilation of a conducting path.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
-
Shimada Masaru
Ntt Microsystem Integration Laboratories
-
JIN Yoshito
NTT Microsystem Integration Laboratories
-
SAKAI Hideaki
NTT Microsystem Integration Laboratories
-
Jin Yoshito
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Sakai Hideaki
NTT Microsystem Integration Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Reversible Resistive Switching in Bi_4Ti_3O_ Thin Films Deposited by Electron Cyclotron Resonance Sputtering
- Metal-Oxide-Semiconductor-Diode Characteristics with SiO_2 Films Formed by Oxidation and Sputtering Using Electron-Cyclotron-Resonance-Plasma Stream
- Non-volatile Al_2O_3 memory using an Al-rich structure as a charge storage layer
- Birefringence and Optical Waveguiding Losses in Preferentially $c$-Axis Oriented LiNbO3 Thin Films on SiO2 Produced by Electron Cyclotron Resonance Plasma Sputtering
- Selective Removal of Dry-Etching Residue Derived from Polymer Sacrificial Layer for Microelectromechanical-System Device Fabrication
- Low-Temperature Silicon Oxidation with Very Small Activation Energy and High-Quality Interface by Electron Cyclotron Resonance Plasma Stream Irradiation
- Synchronized Multiple-Array Vibrational Device for Microelectromechanical System Electrostatic Energy Harvester
- Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- Characterization of Metal Insulator Metal Electrical Properties of Electron Cyclotron Resonance Plasma Deposited Ta2O5
- Reversible Resistive Switching in Bi4Ti3O12 Thin Films Deposited by Electron Cyclotron Resonance Sputtering