Crystal Structure and Electrical Properties of {100}-Oriented Epitaxial BiCoO3–BiFeO3 Films Grown by Metalorganic Chemical Vapor Deposition

概要

論文の詳細を見る
$x$BiCoO3–($1 - x$)BiFeO3 ($x = 0--0.22$) films of 400 nm thickness were grown on $\text{(100)$_{\text{c}}$ SrRuO$_{3}$}\parallel \text{(100) SrTiO$_{3}$}$ substrates by metalorganic chemical vapor deposition. The changes in the crystal structure and electrical properties of the films with $x$ were investigated. The constituent phase changed from rhombohedral to a mixture of rhombohedral and tetragonal, and to tetragonal with increasing $x$, but the $x$ for this transition is different from that of 200-nm-thick films grown on (100) SrTiO3 substrates. The $x$ of the morphotropic phase boundary that consisted of a mixture of tetragonal and rhombohedral symmetries depended on the film thickness. The remanant polarization continuously decreased with increasing $x$, in good agreement with the results obtained with the {100}-oriented Pb(Zr,Ti)O3 epitaxial films owing to the decrease in the crystal anisotropy of the films.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2008-09-25