Maeda Narihiko | Institute For Solid State Physics University Of Tokyo
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概要
関連著者
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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Kobayashi T
Ntt Corp. Kanagawa Jpn
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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WANG Chengxin
NTT Photonics Laboratories, NTT Corporation
著作論文
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Compressively strained In[x]Al1-xN/Al0.22Ga0.78N/GaN(x=0.245-0.325) heterostructure field effect transistors with Regrown AlGaN contact layers (Special issue: Solid state devices and materials)
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
- Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/Gan Insulated Gate Heterostructure Field-Effect Transistors
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors