Oda Yasuhiro | Ntt Photonics Laboratories Ntt Corporation
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概要
関連著者
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Oda Yasuhiro
Ntt Photonics Laboratories Ntt Corporation
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KOBAYASHI Takashi
NTT Photonics Laboratories, NTT Corporation
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SUGIYAMA Hiroki
NTT Photonics Laboratories
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Watanabe Noriyuki
Ntt Photonics Laboratories Ntt Corporation
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YOKOYAMA Haruki
NTT Photonics Laboratories, NTT Corporation
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SATO Michio
NTT Photonics Laboratories
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WATANABE Noriyuki
NTT Advanced Technology Corporation
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Watanabe N
Ntt Photonics Laboratories Ntt Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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WATANABE Noriyuki
NTT Photonics Laboratories
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ENOKI Takatomo
NTT Photonics Laboratories, NTT Corporation
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MAEDA Narihiko
NTT Photonics Laboratories, NTT Corporation
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HIROKI Masanobu
NTT Photonics Laboratories, NTT Corporation
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YAGI Takuma
NTT Advanced Technology Corporation
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Maeda Narihiko
Ntt Corp. Atsugi‐shi Jpn
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Maeda Narihiko
Institute For Solid State Physics University Of Tokyo
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Enoki Takatomo
Ntt Photonics Laboratories
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Matsuzaki Hideaki
Ntt Photonics Laboratories
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Watanabe Kazuo
Ntt Photonics Laboratories Ntt Corporation
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Oda Yasuhiro
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Watanabe Kazuo
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0124 Japan
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Oda Yasuhiro
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0124 Japan
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Oda Yasuhiro
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0124, Japan
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Yokoyama Haruki
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Watanabe Noriyuki
NTT Advanced Technology Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0124, Japan
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Sugiyama Hiroki
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0124 Japan
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Sugiyama Hiroki
NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0124, Japan
著作論文
- Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
- Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer