Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-12-30

著者

• Shigekawa Naoteru

  NTT Photonics Laboratories

• Shigekawa Naoteru

  Institute For Solid State Physics The University Of Tokyo:electro-communication Laboratory Ntt K.k.

• Shiojima Kenji

  Ntt Photonics Laboratories

• Suemitsu T

  Ntt Photonics Lab. Kanagawa Jpn

• Suemitsu Tetsuya

  Ntt Photonics Laboratories

• MAKIMURA Takashi

  NTT Photonics Laboratories, NTT Corporation

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