Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors

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概要

• 論文の詳細を見る

• High reflectivity can be reached with the proper design of a GaN-based semiconductor/air distributed Bragg reflector (DBR) structure even with a large vertical sidewall tilt. Finite-difference time-domain simulations show that vertical sidewall tilt is a crucial concern for obtaining a high-reflectivity DBR in a conventional design. A tilt of only 3° reduces the reflectivity to 〜 30%. Experimentally, it is difficult to etch vertical sidewalls of GaN-based materials. So, the novel design to obtain high reflectivity is important for the application of the GaN-based semiconductor/air DBR structure in waveguide lasers.

• 社団法人応用物理学会の論文
• 2002-06-15

著者

• KOBAYASHI Naoki

  NTT Basic Research Laboratories

• SAITOH Tadashi

  NTT Basic Research Laboratories, Physical Science Laboratory

• Wang H

  Ntt Basic Research Laboratories Ntt Corporation

• Kumagai Masami

  Ntt Basic Res. Labs.

• Kumagai Masami

  Ntt Basic Research Laboratories Ntt Corporation

• TAWARA Takehiko

  NTT Basic Research Laboratories, NTT Corporation

• Wang Hailong

  Ntt Basic Research Laboratories Ntt Corporation

• Tawara Takehiko

  Ntt Basic Research Laboratories Ntt Corporation

• Kobayashi N

  Ntt Basic Research Laboratories Ntt Corporation

• Saitoh Tadashi

  Ntt Basic Research Laboratories Ntt Corporation

• Saitoh Tadashi

  Ntt Basic Research Laboratories

• Kobayashi Naoki

  Ntt Basic Laboratories Ntt Corporation

• Tawara Takehiko

  Ntt Basic Res. Lab. Kanagawa Jpn

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