Yamamoto Hideki | Ntt Basic Research Laboratories
スポンサーリンク
概要
関連著者
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Yamamoto Hideki
Ntt Basic Research Laboratories
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
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Akasaka Tetsuya
NTT Basic Research Laboratories
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Krockenberger Yoshiharu
Ntt Basic Research Laboratories Ntt Corporation
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SATO Hisashi
NTT Basic Research Laboratories
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NAITO Michio
NTT Basic Research Laboratories
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YAMAGUCHI Hiroshi
NTT Basic Research Laboratories
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ONOMITSU Koji
NTT Basic Research Laboratories
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WATANABE Noriyuki
NTT Photonics Laboratories
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AKASAKA Tetsuya
NTT Basic Research Laboratories, NTT Corporation
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Maeda Narihiko
Ntt Photonics Laboratories Ntt Corporation
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Hiroki Masanobu
Ntt Photonics Laboratories Ntt Corporation
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Yokoyama Haruki
Ntt Photonics Lab. Kanagawa Jpn
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
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Kobayashi Yasuyuki
Ntt Basic Research Laboratories
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Mitsuhara Manabu
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Yamamoto Hideki
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Mitsuhashi Masaya
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Maeda Narihiko
NTT Photonics Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Kasu Makoto
Ntt Basic Research Laboratories
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KARIMOTO Shin-ichi
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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KOBAYASHI Yasuyuki
NTT Basic Research Laboratories, NTT Corporation
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Harada Yuichi
Ntt Basic Research Laboratories
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Yamamoto H
Ntt Basic Research Laboratories
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GREIBE Tine
On leave from the technical University of Denmark
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Akasaka Tetsuya
Ntt Basic Research Laboratories Ntt Corporation
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Karimoto Shin-ichi
Ntt Basic Research Laboratories
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Naito Michio
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Irie Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Hirama Kazuyuki
Ntt Basic Research Laboratories Ntt Corporation
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Sakuma Keita
Ntt Basic Research Laboratories Ntt Corporation
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KROCKENBERGER Yoshiharu
NTT Basic Research Laboratories, NTT Corporation
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Naito Michio
Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Lin Chia-Hung
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Akasaka Tetsuya
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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ELEAZER Bennett
NTT BASIC RESEARCH LABS. NTT CORP.
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LIN Chia-Hung
NTT Basic Research Laboratories, NTT Corporation
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Yan Justin
NTT Basic Research Laboratories, NTT Corporation
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Waterston Louise
NTT Basic Research Laboratories, NTT Corporation
著作論文
- New Superconducting Sr_2CuO_ Thin Films Prepared by Molecular Beam Epitaxy
- A New Superconducting Cuprate Prepared by Low-Temperature Thin-Film Synthesis in a Ba -Cu -O System
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- Diamond Field-Effect Transistors with 1.3A/mm Drain Current Density by AlO Passivation Layer (SELECTED TOPICS IN APPLIED PHYSICS : Diamond Semiconductors : from Materials to Devices)
- Molecular Beam Epitaxy and Transport Properties of Infinite-Layer Sr_La_CuO_2 Thin Films
- Universal Superconducting Ground State in Nd1.85Ce0.15CuO4 and Nd2CuO4
- A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- Nucleus and Spiral Growth of N-face GaN(000\bar{1}) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- Nucleus and Spiral Growth of N-face GaN (0001) Obtained by Selective-Area Metalorganic Vapor Phase Epitaxy
- 30aCA-13 Fermi surface reconstruction driven by orbital rearrangement in cuprates