TANIYASU Yoshitaka | NTT Basic Research Laboratories, NTT Corporation

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著作論文

Formation of Solid Solution of Al_Si_xN (0
Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates

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