Arsenic-Doped n-Type Diamond Grown by Microwave-Assisted Plasma Chemical Vapor Deposition
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概要
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We grew n-type arsenic (As)-doped single-crystal diamond layers using tertiarybutylarsine as an As source. The n-type conduction of the As-doped layers was confirmed both in Hall measurements and from the current–voltage characteristics of the diodes. In the As-doped layers, electron concentration increased with As concentration in the layers. The ionization energy of the As donor decreased from 1.6 to 0.7 eV with As concentration from $1\times 10^{17}$ to $9\times 10^{19}$ cm-3. A diamond p–n junction diode with an n-type As-doped layer exhibited a rectification ratio of ${\sim}1000$ at $\pm 10$ V at room temperature.
- 2010-11-25
著者
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Kasu Makoto
Ntt Basic Research Laboratories
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Kubovic Michal
Ntt Basic Research Laboratories
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Kasu Makoto
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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