Correlation between Fe–Zn Interdiffusion Observed by Scanning Capacitance Microscopy and Device Characteristics of Electro-Absorption Modulators
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概要
- 論文の詳細を見る
The advantages of scanning capacitance microscopy (SCM) in observing Fe–Zn interdiffusion of an electro-absorption (EA) modulator and the relationship between the interdiffusion and device characteristics are discussed. SCM images show that there is a Zn diffusion region, in which the semi-insulating region is converted into p-type due to Zn diffusion, on both sides of the mesa and the Zn diffusion region becomes smaller as the Fe doping concentration is reduced. By comparison, scanning electron microscopy (SEM) images captured after stain etching of EA modulators did not clearly delineate the Zn diffusion front. The influence of a ruthenium (Ru)-doped InP burying layer on the interdiffusion has also been investigated by SCM. These results indicate that in order to improve the performance of EA modulators, it is important to prevent Zn diffusion into the semi-insulating layers.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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KONDO Yasuhiro
NTT Photonics Laboratories
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Kondo Susumu
Niigata University Of International And Information Studies
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Iga Ryuzo
Ntt Photonics Laboratories Ntt Corporation
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Yamanaka Takayuki
Ntt Photonics Laboratories Ntt Corp.
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Ogasawara Matsuyuki
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
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Kondo Yasuhiro
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan
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