Effects of Growth Rate on Lateral Compositional Modulation of InGaAsP/InP(001) Grown by Metalorganic Molecular Beam Epitaxy

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概要

• 論文の詳細を見る

• In1-xGaxAs0.85P0.15 ($0.35 \leq x \leq 0.45$) epitaxial layers having a composition lying within the miscibility gap and with strain ranging from $-0.5$% (tension) to +0.3% (compression) were grown on InP (001) substrates using metalorganic molecular beam epitaxy (MOMBE) at growth rates of 0.25 and 0.46 nm/s. Double crystal X-ray diffraction (DCXRD) was mainly used to characterize the structural properties of lateral compositional modulation (LCM). Asymmetric (224) rocking scans show that the modulation period of the LCM is approximately 100 nm and that the amplitudes of the LCM for 0.46 nm/s samples are smaller than those for 0.25 nm/s ones in the entire composition range. Cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements were also performed for the same samples. Each of these investigations indicates that increasing the growth rate reduces the LCM.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• Ogasawara Matsuyuki

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Ogasawara Matsuyuki

  NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan

関連論文

• Correlation between Fe–Zn Interdiffusion Observed by Scanning Capacitance Microscopy and Device Characteristics of Electro-Absorption Modulators
• Effects of Growth Rate on Lateral Compositional Modulation of InGaAsP/InP(001) Grown by Metalorganic Molecular Beam Epitaxy

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