A Highly Linearized MMIC Amplifier Using a Combination of a Newly Developed LD-FET and D-FET Simultaneously Fabricated with a Self-Alignment/Selective Ion-Implantation Process(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and
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概要
- 論文の詳細を見る
We propose linearization techniques for MMIC amplifiers. The key points of these techniques are increased linearity of a newly-developed low-distortion MESFET (LD-FET) and maximized IP3 by combining the LD-FET with a high-gain depletion-mode MESFET (D-FET) with no increase in power consumption. The LD-FET is characterized by its unique channel dopant-profile prepared by a buried p-type ion-implantation and double n-type ion-implantations with high- and low-acceleration energies. This FET achieves flatter behavior in terms of mutual conductance (gm) compared with conventional MESFETs irrespective of changes in the gate bias voltage (V_gs). A self-alignment/selective ion-implantation process enables the LD-FET and D-FET to be fabricated simultaneously. This process encourages IP3 maximization of the multi-stage amplifier by appropriately combining the advantages of the two differently characterized MESFETs. We fabricated and tested a highly linearized two-stage MMIC amplifier utilizing the proposed techniques, and found that its third-order intermodulation ratio (IMR) performance was 8.7dB better than that of conventional MMIC amplifiers at an input signal level of -20 dBm with no increase in current dissipation. The configuration constructed by using the proposed techniques equivalently reduces the current dissipation of the second stage to 1/2.72 times that of the conventional configuration, which requires a 2.72 times larger D-FET at the second stage to obtain an 8.7-dB IMR improvement. Furthermore, we were able to improve the IMR by 3.5dB by optimizing the gate bias conditions for the LD-FET. These results confirm the validity of the proposed techniques.
- 社団法人電子情報通信学会の論文
- 2002-12-01
著者
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MURAGUCHI Masahiro
NTT Electronics Corporation
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YAMAGUCHI Yo
NTT Network Innovation Laboratory
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MURAGUCHI Masahiro
NTT Photonics Laboratories, NTT Corporation
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Muraguchi Masahiro
Currently With Ntt Electronics Co. Ltd.
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Muraguchi Masahiro
Ntt Photonics Laboratories
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Yamaguchi Y
Ntt Corp. Yokosuka‐shi Jpn
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Muraguchi M
Ntt Electronics Corporation
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NAKATSUGAWA Masashi
NTT Department III (R&D Strategy Department)
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Yamaguchi Yo
Ntt Network Innovation Laboratories
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Nakatsugawa M
Ntt Department Iii (r&d Strategy Department)
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NAKATSUGAWA Masashi
NTT Department III (R&D Strategy Department)
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