Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
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概要
- 論文の詳細を見る
A P-type GaP layer was grown by the liquid phase epitaxy process on an N-type GaP substrate in an open-system. Zinc was supplied through the vapor phase. The zinc concentrations in the grown epitaxial layers were calculated based on the assumptions that zinc-gallium-GaP solution was ideal and that the distribution coefficient of zinc was 0.072 at 1110℃ and did not depend on zinc concentration. The result gave a good agreement with the experiment. Reproducible control of zinc concentration in the liquid epitaxy process in an open-system was established. Highly efficient red light emitting junctions were reproducibly grown by the single liquid epitaxy process on SSD GaP wafers and the highest quantum efficiency so far obtained was 10.1%.
- 社団法人応用物理学会の論文
- 1973-11-05
著者
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WATANABE Naozo
Sony Corporation Research Center
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Kaneko Kunio
Sony Corporation Research Center
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DOSEN Masashi
SONY CORPORATION Research Center
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