Degradation of GaP Red LED's Depending on the Donor Concentration in the n-Region
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-05
著者
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Kaneko Kunio
Sony Corporation Research Center
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ISAWA Nobuyuki
Sony Corporation, Semiconductor Products Div.
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Isawa Nobuyuki
Sony Corporation Semiconductor Products Div.
関連論文
- Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Degradation of GaP Green LEDs
- Degradation of GaP Red LED's Depending on the Donor Concentration in the n-Region
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- Fitting Analysis of TSCAP Spectrum
- The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
- DLTS Study of Cr Trap Density in Thermally Converted Semi-Insulating GaAs
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition