DLTS Study of Cr Trap Density in Thermally Converted Semi-Insulating GaAs
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概要
- 論文の詳細を見る
Deep traps in Cr-doped semi-insulating GaAs annealed under various arsenic partial pressureswere investigated by DLTS and in-depth profiles of Cr trap density were obtained. The profiles show out-diffusion of Cr traps. Near the surface region, however, the electrically active Cr trap density was about ten times lower than the Cr atomic density.
- 社団法人応用物理学会の論文
- 1980-07-05
著者
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Kumagai Osamu
Sony Corporation Research Center
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KASAHARA Jiro
Sony Corporation Research Center
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Kaneko Kunio
Sony Corporation Research Center
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Kasahara Jiro
Sony Corporation Materials Laboratory
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