The Energy Levels of Zn and Se in (Al_xGa_<1-x>)_<0.52>In_<0.48>P
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概要
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The energy levels of Zn and Se impurities in (Al_xGa_<1-x>)_<0.52>In_<0.48>P were investigated by temperature dependent Hall measurement. The activation energy of Zn acceptor increases monotonically with increasing AlInP mole fraction x, from 25 meV at x=0 to 97 meV at x=0.75. The activation energy of Se donor begins to increase at x=0.2-0.3, and it reaches a maximum value of about 95 meV around x=0.4. As x increases from 0.5 to 1, the energy level tends to decrease to 72 meV. This compositional dependence of the energy levels in p-type and n-type materials is similar to those in AlGaAs.
- 社団法人応用物理学会の論文
- 1985-03-20
著者
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Ikeda Masao
Sony Corporation Research Center
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MORI Yoshifumi
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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Kaneko Kunio
Sony Corporation Research Center
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HONDA Masumi
Sony Corporation Research Center
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