InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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Nakamura F
Riken (the Inst. Physical And Chemical Res.) Saitama Jpn
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Nakamura Fumihiko
SONY Corporation Research Center
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TAIRA Kenichi
Sony Corporation Research Center
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HASE Ichiro
Sony Corporation Research Center
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MORI Yoshifumi
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
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Taira K
Research Center Sony Corporation
関連論文
- Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces
- Quantum-Dot Based Opto-Electronic Device (Special Issue on Technology Challenges for Single Electron Devices)
- Tunneling Spectroscopy of InAs Wetting Layers and Self-Assembled Quantum Dots: Resonant Tunneling through Two- and Zero-Dimensional Electronic States
- Resonant Tunneling Spectroscopy of Sidewall-Confined States and Impurity-Bound States Using AlGaAs-GaAs Triple-Barrier Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- AlGaInP Visible Semiconductor Lasers : COMPONENTS
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
- High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
- Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition (Special Issue on Heterostructure Electron Devices)
- Enhancement of Electron Density in the Base of GaSb/InAs Hot Electron Transistor
- InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Residual Donor Impurities in MO-CVD Gallium Arsenide
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors : I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors
- Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu, Al Phosphor
- Concentration Dependence of Green-Cu Luminescence in ZnS : Cu, Al
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. : II. Al and Te Doped Phosphors
- Performance of AIN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
- Effects of Fluxes on Particle Growth of ZnS Phosphor
- Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
- Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
- Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors
- High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_As
- Photoluminescence Spectra of Silver-Doped ZnSe Grown by MBE
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
- Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
- Heterointerface Field Effect Transistor with 200 A-Long Gate : Semiconductors and Semiconductor Devices
- Current–Voltage Characteristics of AlN/GaN Heterostructure Metal Insulator Semiconductor Diode
- Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces