Kawai Hiroji | Sony Corporation Research Center
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概要
関連著者
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Kawai Hiroji
Sony Corporation Research Center
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Kawai Hiroji
Sony Corporation Frontier Science Laboratories
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HOSHINA Teruhiko
Sony Corporation Research Center
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Nakamura F
Riken (the Inst. Physical And Chemical Res.) Saitama Jpn
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Nakamura Fumihiko
SONY Corporation Research Center
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Kaneko Kunio
Sony Corporation Research Center
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Taira K
Research Center Sony Corporation
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Imanaga Syunji
Sony Corporation Research Center, Yokohama Technology Center
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Imanaga Syunji
Sony Corporation Frontier Science Laboratories
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TAIRA Kenichi
Sony Corporation Research Center
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MORI Yoshifumi
Sony Corporation Research Center
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Kuboniwa Shigeo
Sony Corporation Research Center
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Funato Kenji
Sony Corporation Research Center
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Funato K
Sony Corp. Yokohama Jpn
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Imanaga Syunji
Sony Corporation Research Center
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Abe Tomohiko
Sony Corporation Research Center
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KAJIWARA Kazuo
Sony Corporation
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Ishikawa Hideto
Sony Corporation Research Center
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HASE Ichiro
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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Kaneko K
Japan Sci. And Technol. Corp. Nagoya Jpn
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Kamada Mikio
Sony Corporation Research Center
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Kawai H
Sony Corporation Research Center
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Kajiwara Kazuo
Sony Corporation Research Center
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Taira Kenichi
Department of Physics, University of Illinois
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SAKAMOTO Masamichi
Sony Corporation Semiconductor Group, Atsugi Plant
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OKADA Tsunekazu
Sony Corporation Semiconductor Group, Atsugi Plant
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Kawai H
Sony Corporation Frontier Science Laboratories
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Okada Tsunekazu
Sony Corporation Semiconductor Group Atsugi Plant
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Sakamoto Masamichi
Sony Corporation Semiconductor Group Atsugi Plant
著作論文
- Highly Resistive Iron-Doped AlInAs Layers Grown by Metalorganic Chemical Vapor Deposition
- Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition (Special Issue on Heterostructure Electron Devices)
- Enhancement of Electron Density in the Base of GaSb/InAs Hot Electron Transistor
- InAs/GaSb Hot Electron Transistors Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors : I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors
- Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu, Al Phosphor
- Concentration Dependence of Green-Cu Luminescence in ZnS : Cu, Al
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. : II. Al and Te Doped Phosphors
- Performance of AIN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
- Effects of Fluxes on Particle Growth of ZnS Phosphor
- Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
- Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
- Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors