Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
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概要
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Reverse biased electroluminescence is observed in In-alloyed ZnTe (P-doped, ∼10^<18>/cm^3) diode at liq. N_2 temperature. There are two characteristic emission bands in the luminescence spectrum. One is a green band, about 60 Å in width, centred at 5400 Å. The other is a red band and extends from about 5800 Å to 7000 Å. The former is attributed to P-centre emission, while the latter to In-centre emission. The weight of the two emission bands change with the alloying temperature, higher temperature favouring the latter. The emission mechanism is explained as a breakdown in the metal-semi=insulator-semiconductor (p-type) structure.
- 社団法人応用物理学会の論文
- 1965-05-15
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