Radiation Annealing of GaAs Implanted with Si
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概要
- 論文の詳細を見る
The use of radiation from halogen lamps to anneal implanted GaAs has been studied. Semi-insulating GaAs wafers implanted with 3×10^<12> cm^<-2> silicon at 70 keV were completely activated by 5 seconds rediation with or without encapsulation. The wafer temperature reached 950℃. This annealing method minimizes the thermal conversion of semi-insulating GaAs wafers.
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Arai Michio
Sony Corporation Research Center
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WATANABE Naozo
Sony Corporation Research Center
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NISHIYAMA Kazuo
Sony Corporation Research Center
関連論文
- Formation of p^+-layer in GaAs by dual implantation of Zn and As
- Redistrubution of Zn Implanted into GaAs
- Injection Luminescence in ZnTe Diodes
- Threshold Voltage Uniformity of GaAs-FETs on Ingot-Annealed Substrates
- The Energy Levels of Zn and Se in (Al_xGa_)_In_P
- Structure of MOCVD Grown AlAs/GaAs Hetero-Interfaces Observed by Transmission Electron Microscopy
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- Radiation Annealing of GaAs Implanted with Si
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_As
- Forward and Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current : B-3: LASER
- Semi-Sealing Capless Anneal of GaAs
- Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- Near Infrared Absorption in P-Doped ZnTe Crystals
- Near Infrared Absorption in Phosphorus Doped P-Type ZnTe
- Redistribution of Cr in Capless-Annealed GaAs under Arsenic Pressure
- Infrared Absorption in P-Type Semiconductors with Zincblebde Structure : Application to Zinc Telluride
- Magnetosensitive Thyristor
- Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence
- Dielectric Constant of PbTe
- Radiation Annealing of Boron-Implanted Silicon with a Halogen Lamp