Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron Resonance

概要

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Nitrogen-doped p-type ZnSe films have been grown by molecular beam epitaxy using electron cyclotron resonance (ECR) plasma of N_2. The nitrogen concentration in the film from 1×10^<17> to 6×10^<18> cm^<-3> has been controlled by adjusting both the aperture area of the ECR cell and the input microwave power. A net acceptor concentration as high as 4.5×10^<17> cm^<-3> was obtained by C-V measurements, and up to this level, the ratio of the net acceptor concentration to the incorporated nitrogen impurity concentration was almost unity. Donor-to-acceptor (DA) emission dominated the photoluminescence spectra at 4.2 K, and the emission intensity ratio of deep to DA emissions was less than 1/1000 for the ZnSe films with nitrogen concentrations less than 2×10^<18> cm^<-3>.
社団法人応用物理学会の論文
1992-09-15