Optically Pumped Blue Lasing in ZnSe-ZnMgSSe Double Heterostructures at Room Temperature
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概要
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We report the first operation of ZnSe-ZnMgSSe double-heterostructure photopumped blue lasers with a threshold excitation intensity at 150 kW/cm^2 at room temperature. The lasing was confirmed by measuring the polarization. This result indicates that ZnMgSSe is a promising material for the cladding layer of a blue laser diode. Until now, no material had been lattice-matched to a GaAs substrate and had sufficient band-gap energy. If p-type and n-type doping is possible, this ZnSe-ZnMgSSe double heterostructure can be applied to a blue laser diode.
- 社団法人応用物理学会の論文
- 1992-03-15
著者
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Akimoto Katsuhiro
Sony Corporation Research Center
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OKUYAMA Hiroyuki
Sony Corporation Research Center
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HIEI Futoshi
Sony Corporation Research Center
関連論文
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- Photopumped Blue Lasers with ZnSSe-ZnMgSSe Double Heterostructure and Attempt at Doping in ZnMgSSe
- Ti/Pt/Au Ohmic Contacts to n-Type ZnSe
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
- Optically Pumped Blue Lasing in ZnSe-ZnMgSSe Double Heterostructures at Room Temperature
- Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron Resonance
- Photoluminescence Spectra of Silver-Doped ZnSe Grown by MBE
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
- Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes