A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology
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概要
- 論文の詳細を見る
This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of static random access memory (SRAM). For the first time, significant enhancement of static noise margin (SNM) is successfully realized by using a body bias of load, access, and driver transistors while suppressing threshold-voltage variations. In this technology, well taps control the body potential of the load transistor and word lines also control the body potential of the access and driver transistors. It is demonstrated that the write and read margins of 65-nm-node silicon-on-insulator (SOI) SRAMs are improved by the Advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32 nm and 49% for 22 nm node. It is summarized that this technology is one of countermeasures for emerging generations.
- 2008-04-25
著者
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HIRANO Yuuichi
Advanced Device Development Dept., Renesas Technology Corp.
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Tsujiuchi Mikio
Advanced Device Development Dept. Renesas Technology Corp.
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Uchida Tetsuya
Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.
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Oda Hidekazu
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ishikawa Kozo
Renesas Semiconductor Engineering, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Shinohara Hirofumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Terada Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Maki Yukio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Eikyu Katsumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Obayashi Shigeki
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Nii Koji
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsukamoto Yasumasa
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yabuuchi Makoto
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inoue Yasuo
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ipposhi Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsujiuchi Mikio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hirano Yuuichi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Uchida Tetsuya
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Iwamatsu Toshiaki
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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