Formulation of a Viscoelastic Stress Problem Using Analytical Integration and Its Appllcatlon to Viscoelatic Oxidatlon Simulation : Semiconductors

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概要

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• Formulation of a viscoelastic stress problem adopting an analytical integration scheme, which was originally proposed by Peng and co-authors [Proc. Symp. Process Physics and Modeling in Semiconductor Technology, Manchester, 1991, p.772 ; COMPEL 10 (1991) 341], is given in a complete form. This formulation includes the treatment of initial strain, an implicit solution method, and improvement of the solution by successive iteration. According to the formulation, a two-dimensional oxidation program is made. Through the calculations of oxidation of a simple test structure, it is reconfirmed that numerical instability can be improved by adopting the scheme of Peng and co-authors [Proc. Symp. Process Physics and Modeling in Semiconductor Technology, Manchester, 1991, p.772 ; COMPEL 10 (1991) 341]. Other aspects of the behavior of the solution, including the dependence of the solution on the magnitude of time steps, are also shown.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Nishi Kenji

  Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.

• UCHIDA Tetsuya

  Advanced Technology Research Department, Semiconductor Leeding Edge Technologies, Inc.

• Uchida Tetsuya

  Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.

• Uchida Tetsuya

  Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan

関連論文

• Formulation of a Viscoelastic Stress Problem Using Analytical Integration and Its Appllcatlon to Viscoelatic Oxidatlon Simulation : Semiconductors
• A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology

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