Uchida Tetsuya | Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.
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概要
関連著者
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Uchida Tetsuya
Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.
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Uchida Tetsuya
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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HIRANO Yuuichi
Advanced Device Development Dept., Renesas Technology Corp.
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Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
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Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
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Tsujiuchi Mikio
Advanced Device Development Dept. Renesas Technology Corp.
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Nishi Kenji
Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.
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UCHIDA Tetsuya
Advanced Technology Research Department, Semiconductor Leeding Edge Technologies, Inc.
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Oda Hidekazu
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ishikawa Kozo
Renesas Semiconductor Engineering, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Shinohara Hirofumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Terada Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Maki Yukio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Eikyu Katsumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Obayashi Shigeki
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Nii Koji
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsukamoto Yasumasa
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yabuuchi Makoto
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inoue Yasuo
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ipposhi Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsujiuchi Mikio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Hirano Yuuichi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Iwamatsu Toshiaki
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
著作論文
- Formulation of a Viscoelastic Stress Problem Using Analytical Integration and Its Appllcatlon to Viscoelatic Oxidatlon Simulation : Semiconductors
- A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology