Ishikawa Kozo | Renesas Semiconductor Engineering, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
スポンサーリンク
概要
- Ishikawa Kozoの詳細を見る
- 同名の論文著者
- Renesas Semiconductor Engineering, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japanの論文著者
関連著者
-
Iwamatsu Toshiaki
Advanced Device Development Dept. Renesas Technology Corp.
-
Oda Hidekazu
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Ishikawa Kozo
Renesas Semiconductor Engineering, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Terada Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Inoue Yasuo
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Iwamatsu Toshiaki
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
HIRANO Yuuichi
Advanced Device Development Dept., Renesas Technology Corp.
-
Ipposhi Takashi
Advanced Device Development Dept. Renesas Technology Corp.
-
Tsujiuchi Mikio
Advanced Device Development Dept. Renesas Technology Corp.
-
Uchida Tetsuya
Advanced Technology Research Department Semiconductor Leeding Edge Technologies Inc.
-
Shinohara Hirofumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Maki Yukio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Eikyu Katsumi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Obayashi Shigeki
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Nii Koji
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Tsukamoto Yasumasa
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Yabuuchi Makoto
Advanced Design Framework Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Ipposhi Takashi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Tsujiuchi Mikio
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Hirano Yuuichi
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
-
Uchida Tetsuya
Advanced Device Development Department, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
著作論文
- A Robust Silicon-on-Insulator Static-Random-Access-Memory Architecture by using Advanced Actively Body-Bias Controlled Technology
- Electrical Characteristics and Crystal Quality Analysis of Thin-Body $\langle 100\rangle$ Channel Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using Two-Step Elevated Silicon Epitaxial Process